Mike,
Most DDR designs that I have worked on or have seen had used had a @ 100ohm termination resistor across the DDR_CLK+/DDR_CLK- nets even when there was a termination supply and resistors to VTT(1.25V). Micron does call the DDR_CLK+/DDR_CLK- nets a differential clock (See Micron Technical note TN-46-14: Hardware Tips for Point-to-Point System Design).
DDR is a little more flexible with respect to trace length mathcing.
Here are the generic DDR_SDRAM net rules that I typically use:
------------------------------------------------------------------------------------------
1. The DDR net groups (databyte0, databyte1, and Address/control) should be within 100mils of each other in length.
2. All DDR nets should be within 500mils of each other in length.
3. The DDR_CLK+/- should be within 20mils of each other in length.
4. The DDR_CLK+/- should have @ Zdiff=100ohms+/-10ohms.
5. Target Impedance for DDR nets should be in range 40 to 50 ohms.
6. The DDR Data nets & DQMx for DATABYTEx in relation to data Strobe DQSx should be within plus/minus 35 mils in length.
Cost reduced DDR termination (short trace lengths and only a couple DDR ICs) would would genrally consist of series termination on DDR nets, a @ 100ohm termination resistor across the DDR_CLK+/DDR_CLK- nets, and VREF (1.25V) generation via resistor divider (1K/1K) of 2.5V DDR supply with a small .01uf cap for each Vref pin for each DDR IC. In Cost reduced DDR termination scheme, the National LM2995 VTT (1.25V)termination supply can be eliminated along with all of the resistors to VTT.
As long as you run simulations in Hyperlynx, you will be fine.
:-)